Datasheet Details
| Part number | AOTL66912 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTL66912-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66912 100V N-Channel AlphaSGT TM General.
| Part number | AOTL66912 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTL66912-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET - AlphaSGTTM technology • bination of low RDS(ON) and wide safe operating area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Tele hotswap • Load switch • Solar • Battery management 100% UIS Tested 100% Rg Tested Top View TOLLA Bottom View 100V 380A < 1.7mΩ < 2.5mΩ D D PIN1 Orderable Part Number AOTL66912 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C (≤100μS) Continuous Drain Current Avalanche Current C Avalanche energy TA=25°C TA=70°C L=0.1mH C TC=25°C Power Dissipation B TC=100°C ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 380 269 1520 49 39 90 405 500 250 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 35 0.2 Max 15 45 0.3 Units °C/W °C/W °C/W Rev.1.0: June 2019 .aosmd.
Page 1 of 6 AOTL66912 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=6V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Curren
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