Datasheet Details
| Part number | AOTL66915 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 494.10 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66915-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOTL66915 100V N-Channel AlphaSGT TM General.
| Part number | AOTL66915 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 494.10 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66915-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET technology • Higher in-rush current enabled for faster start-up and shorter down time • RoHS 2.0 and Halogen-Free pliant • Tj=175C Rated Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V 339A < 1.7mΩ < 2.3mΩ Applications • Load switch • BMS • Motor 100% UIS Tested 100% Rg Tested Max Tj=175°C TOLLA Top View Bottom View D D PIN1 Orderable Part Number AOTL66915 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 339 239 832 51 43 100 500 428 214 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 35 0.25 Max 15 45 0.35 Units °C/W °C/W °C/W Rev.1.0: July 2022 .aosmd.
Page 1 of 6 AOTL66915 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.8 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Inp
| Part Number | Description |
|---|---|
| AOTL66912 | N-Channel MOSFET |
| AOTL66912Q | 100V N-Channel MOSFET |
| AOTL66914 | 100V N-Channel MOSFET |
| AOTL66918 | 100V N-Channel MOSFET |
| AOTL66401 | 40V N-Channel MOSFET |
| AOTL66515 | 150V N-Channel MOSFET |
| AOTL66518 | 150V N-Channel MOSFET |
| AOTL66518Q | 150V N-Channel MOSFET |
| AOTL66608 | 60V N-Channel MOSFET |
| AOTL66810Q | 80V N-Channel MOSFET |