Datasheet Details
| Part number | AOTL66912Q |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.19 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66912Q-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66912Q 100V N-Channel AlphaSGT TM AEC-Q101 Qualified General.
| Part number | AOTL66912Q |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.19 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOTL66912Q-AlphaOmegaSemiconductors.pdf |
|
|
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• AEC-Q101 Qualified • Trench Power MOSFET - AlphaSGTTM technology • Low Rds(on) • Higher in-rush current capability • 175°C operating junction temperature • MSL1 up to 260°C reflow • RoHS 2.0 and Halogen-Free pliant Applications • BLDC Motor Drive • Battery Management Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 100V 370A < 1.7mΩ < 2.5mΩ TOLLA Top View Bottom View D D PIN1 Orderable Part Number AOTL66912Q S G PIN1 Package Type TOLLA Form Tape & Reel G S Minimum Order Quantity 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C (≤100μS) IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 370 260 1480 53 44 90 405 500 250 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 10 35 Maximum Junction-to-Case Steady-State RqJC 0.2 Max 15 45 0.3 Units °C/W °C/W °C/W Rev.1.0: July 2023 .aosmd.
Page 1 of 7 AOTL66912Q Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 VGS=10V, ID=100A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=75A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forwar
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