Datasheet Summary
AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications). AO4816L is a Green Product ordering option. AO4816 and AO4816L are electrically identical.
Features
VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
..
1 2 3 4
8 7 6 5
G1 S1
G2...