Datasheet Summary
AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications). AO4822AL is a Green Product ordering option. AO4822A and AO4822AL are electrically identical.
Features
VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
..
1 2 3 4
8 7 6 5
G1 S1
G2...
