Datasheet Summary
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AOU452 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU452 is Pb-free (meets ROHS & Sony 259 specifications). AOU452L is a Green Product ordering option. AOU452 and AOU452L are electrically identical.
TO-251 D
Features
VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V)
Top View Drain Connected to...