AOU400 Datasheet | Alpha & Omega Semiconductors

Description The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product ordering option. AOU400 and AOU400L are electrically identical. Features VDS (V) = 60V ID = 38A (VGS = 10V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H C TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B Maximum 60 ±20 38 27 60 30 140 60 30 -55 to 175 Units V V A A m J W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG Steady-State Steady-State Symbol RθJA RθJC Typ 51 1.4 Max 60 2.5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A VDS=5V, ID=20A Min 60 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 1 5 100 1 60 16 31 20 5.6 0.74 1 4 1920 2300 25 20 2.1 3 µA n A V A mΩ mΩ S V A p F p F p F Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous...