AOU405 Datasheet | Alpha & Omega Semiconductors

Description The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications. Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications). AOU405L is a Green Product ordering option. AOU405 and AOU405L are electrically identical. TO-251 D Top View Drain Connected to Tab G S G D S Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Maximum -30 ±20 -18 -18 -40 -18 40 60 30 2.5 1.6 -55 to 175 Units V V A A m J W W °C TA=25°C TA=100°C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.7 40 1.8 Max 25 50 2.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-18A TJ=125°C VGS=-4.5V, ID=-10A VDS=-5V, ID=-18A Min -30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance -0.003 -1 -5 ±100 µA n A V A -1.2 -40 -2 28 40 48 17...