AOU403 Datasheet | Alpha & Omega Semiconductors

Description The AOU403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU403 is Pb-free (meets ROHS & Sony 259 specifications). AOU403L is a Green Product ordering option. AOU403 and AOU403L are electrically identical. TO-251 D Features VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mΩ (VGS = -10V) RDS(ON) < 150mΩ (VGS = -4.5V) Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current Maximum -60 ±20 -12 -10 -30 -12 23 50 25 -55 to 175 Units V V A A m J W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1m H Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 105 2.5 Max 125 3 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-48V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-12A TJ=125°C VGS=-4.5V, I D=-8A VDS=-5V, ID=-12A Min -60 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance -0.003 -1 -5 ±100 µA n A V...