Datasheet Summary
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AOU456 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU456 is Pb-free (meets ROHS & Sony 259 specifications). AOU456L is a Green Product ordering option. AOU456 and AOU456L are electrically identical.
TO-251 D
Features
VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <7 mΩ (VGS = 10V) RDS(ON) <10 mΩ (VGS = 4.5V) 193 18
Top View Drain Connected to...