BLA9G1011LS-300 Datasheet | Ampleon

BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS transistor Rev. 1 - 25 July 2017 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 m A; in a class-AB demo test circuit. Test signal f Gp D tr tf (MHz) (V) (W) (d B) (%) (ns) (ns) pulsed RF 317 20.6 63.5 14 317 21.5 64.8 14 317 21.8 64.8 14 1.2 Features and benefits - Easy power control - Integrated dual sided ESD protection enables excellent off-state isolation - Enhanced ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (1030 MHz to 1090...