BLA9G1011LS-300G Description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Typical information Typical RF performance at Tcase = 25 C; in a class-AB demo test circuit.
BLA9G1011LS-300G Key Features
- Easy power control
- Integrated dual sided ESD protection enables excellent off-state isolation
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1030 MHz to 1090 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances