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BLA9G1011LS-300G - Power LDMOS transistor

This page provides the datasheet information for the BLA9G1011LS-300G, a member of the BLA9G1011L-300 Power LDMOS transistor family.

Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit.

Features

  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1030 MHz to 1090 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLA9G1011LS-300G
Manufacturer Ampleon
File Size 807.73 KB
Description Power LDMOS transistor
Datasheet download datasheet BLA9G1011LS-300G Datasheet
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BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS transistor Rev. 1 — 25 July 2017 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 32 317 20.6 63.5 14 5 1060 32 317 21.5 64.8 14 5 1090 32 317 21.8 64.8 14 5 1.
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