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BLF0910H6LS500 - Power LDMOS transistor

Download the BLF0910H6LS500 datasheet PDF. This datasheet also covers the BLF0910H6L500 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

Table 1.

Key Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for broadband operation (900 MHz to 930 MHz).
  • Internally input matched.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF0910H6L500-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF0910H6LS500
Manufacturer Ampleon
File Size 1.37 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF0910H6LS500 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF0910H6L500; BLF0910H6LS500 Power LDMOS transistor Rev. 2 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW [1] 915 50 500 18 CW pulsed [2][3] 915 50 500 19.5 [1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s;  = 10 %. D (%) 61 62.5 1.