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BLF0910H6LS500 - Power LDMOS transistor

This page provides the datasheet information for the BLF0910H6LS500, a member of the BLF0910H6L500 Power LDMOS transistor family.

Datasheet Summary

Description

A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

Table 1.

Features

  • High efficiency.
  • Easy power control.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for broadband operation (900 MHz to 930 MHz).
  • Internally input matched.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLF0910H6LS500

Datasheet Details

Part number BLF0910H6LS500
Manufacturer Ampleon
File Size 1.37 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF0910H6LS500 Datasheet
Additional preview pages of the BLF0910H6LS500 datasheet.

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Full PDF Text Transcription

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BLF0910H6L500; BLF0910H6LS500 Power LDMOS transistor Rev. 2 — 13 April 2017 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW [1] 915 50 500 18 CW pulsed [2][3] 915 50 500 19.5 [1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s;  = 10 %. D (%) 61 62.5 1.
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