BLF0910H6LS500
description
A 500 W LDMOS power transistor for industrial applications at frequency of 915 MHz.
The BLF0910H6L500 and BLF0910H6LS500 are designed for high-power CW applications and are assembled in high performance ceramic packages.
Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 m A in a class-AB application circuit.
Test signal f
Gp
(MHz)
(V) (W) (d B)
CW [1]
915 50 500 18
CW pulsed [2][3]
915 50 500 19.5
[1] Tcase = 65 C. [2] Tcase = 25 C. [3] tp = 100 s; = 10 %.
D (%) 61 62.5
1.2 Features and benefits
- High efficiency
- Easy power control
- Excellent ruggedness
- Integrated ESD protection
- Designed for broadband operation (900 MHz to 930 MHz)
- Internally input matched
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
-...
