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BLF189XRA - Power LDMOS transistor

General Description

A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Table 1.

Key Features

  • Easy power control.
  • Integrated dual sided ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLF189XRA
Manufacturer Ampleon
File Size 827.00 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF189XRA Datasheet

Full PDF Text Transcription for BLF189XRA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLF189XRA. For precise diagrams, and layout, please refer to the original PDF.

BLF189XRA; BLF189XRAS Power LDMOS transistor Rev. 1 — 6 November 2017 Product data sheet 1. Product profile 1.1 General description A 1700 W extremely rugged LDMOS power ...

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profile 1.1 General description A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1700 Gp (dB) 26.2 D (%) 74 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.