BLF189XRB
description
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.
Table 1. Application information
Test signal f
(MHz) pulsed RF
(V) (W)
50 1900
Gp (d B) 26
D (%) 72.5
1.2 Features and benefits
- Easy power control
- Integrated dual sided ESD protection enables class C operation and plete switch off of the transistor
- Excellent ruggedness VSWR > 65 : 1
- High efficiency
- Excellent thermal stability
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
BLF189XRB; BLF189XRBS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF189XRB (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF189XRBS (SOT539B) 1 drain1 2 drain2 3...
