Download the BLF189XRBS datasheet PDF.
This datasheet also covers the BLF189XRB variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.
Table 1.
Key Features
Easy power control.
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor.
Excellent ruggedness VSWR > 65 : 1.
High efficiency.
Excellent thermal stability.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3.
Full PDF Text Transcription for BLF189XRBS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLF189XRBS. For precise diagrams, and layout, please refer to the original PDF.
BLF189XRB; BLF189XRBS Power LDMOS transistor Rev. 1 — 3 October 2017 Product data sheet 1. Product profile 1.1 General description A 1900 W extremely rugged LDMOS power t...
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rofile 1.1 General description A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1900 Gp (dB) 26 D (%) 72.5 1.2 Features and benefits Easy power control Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor Excellent ruggedness VSWR > 65 : 1 High efficiency Excellent thermal stability Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
BLF189XRBS Datasheet
