BLF189XRBS Description
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band. Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 1900 Gp (dB) 26 D (%) 72.5 1.2.
BLF189XRBS Key Features
- Easy power control
- Integrated dual sided ESD protection enables class C operation and plete switch
- Excellent ruggedness VSWR > 65 : 1
- High efficiency
- Excellent thermal stability
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances