BLF189XRAS
description
A 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.
Table 1. Application information
Test signal f
(MHz) pulsed RF
(V) (W)
50 1700
Gp (d B) 26.2
D (%) 74
1.2 Features and benefits
- Easy power control
- Integrated dual sided ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 500 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
BLF189XRA; BLF189XRAS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF189XRA (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF189XRAS (SOT539B) 1...
