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BLF8G19LS-170BV Datasheet Power LDMOS transistor

Manufacturer: Ampleon

Overview: BLF8G19LS-170BV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.

General Description

170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (100 M.