Datasheet4U Logo Datasheet4U.com

BLF8G19LS-170BV - Power LDMOS transistor

Description

170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (100 M.

📥 Download Datasheet

Datasheet Details

Part number BLF8G19LS-170BV
Manufacturer Ampleon
File Size 415.05 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G19LS-170BV Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF8G27LS-140V Power LDMOS transistor NXP
BLF8G27LS-150GV Power LDMOS transistor NXP
BLF8G27LS-150V Power LDMOS transistor NXP
BLF8G38LS-75V Power LDMOS transistor NXP
BLF820 (BLF082 / BLF820) surface Mountable RFI Filters Tyco Electronics

Other Datasheets by Ampleon

Part Number Description
BLF8G10L-160 Power LDMOS transistor
BLF8G10LS-160 Power LDMOS transistor
BLF8G10LS-160V Power LDMOS transistor
BLF8G10LS-270 Power LDMOS transistor
BLF8G10LS-270GV Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF8G19LS-170BV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA [1] 1930 to 1990 1300 32 60 18.0 32 31 1-carrier W-CDMA [2] 1805 to 1880 1300 28 33 19.8 29 40 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.
Published: |