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BLF8G24LS-100GV Datasheet Power LDMOS transistor

Manufacturer: Ampleon

Overview: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.

Download the BLF8G24LS-100GV datasheet PDF. This datasheet also includes the BLF8G24LS-100V variant, as both parts are published together in a single manufacturer document.

General Description

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (90 MHz typical).
  • Designed for broadband operation (2300 MHz to 2400 MHz).
  • Lower output capacitance for improved performance.