BLF8G24LS-200PN - Power LDMOS transistor

Description

200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for broadband operation (2300 MHz to 2400 MHz).
• Lower output capacitance for improved performance in Doherty.