Datasheet4U Logo Datasheet4U.com

BLF8G24LS-100V - Power LDMOS transistor

Description

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (90 MHz typical).
  • Designed for broadband operation (2300 MHz to 2400 MHz).
  • Lower output capacitance for improved performance.

📥 Download Datasheet

Datasheet Details

Part number BLF8G24LS-100V
Manufacturer Ampleon
File Size 462.47 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G24LS-100V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2300 to 2400 900 28 25 19 32 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.
Published: |