MT5C2568
Overview
The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.
- Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible OPTIONS
- Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2 70ns access2 100ns access
- Package(s)3 Ceramic DIP (300 mil) Ceramic DIP (600 mil) Ceramic LCC (28 leads) Ceramic LCC (32 leads) Ceramic LCC Ceramic Flat Pack Ceramic SOJ MARKING -12 -15 -20 -25 -35 -45 -55 -70 -100
