B2D20065K1 Description
B2D20065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=155°C) 20 A QC 58.
B2D20065K1 Key Features
- Low leakage current (IR)
- Zero reverse recovery current
- Temperature independent switching behavior
- Positive temperature coefficient on VF
- High surge current capacity
- Low capacitive charge
- System cost savings due to smaller magnetics
- System efficiency improvement over Si diodes
- Reduction of heat sink requirements
- Enabling higher frequency