Datasheet4U Logo Datasheet4U.com

B2D20120HC1 - SiC Schottky Diode

Description

of Changes Release of the datasheet.

Preliminary datasheet.

BASiC Semiconductor Ltd.

Features

  • s.
  • Extremely low reverse current.
  • No reverse recovery current.
  • Temperature independent switching.
  • Positive temperature coefficient on VF.
  • Excellent surge current capability.
  • Low capacitive charge Benefits.
  • Essentially no switching losses.
  • System efficiency improvement over Si diodes.
  • Increased power density.
  • Enabling higher switching frequency.
  • Reduction of heat sink requirements.
  • System cost savings due to smaller magnetics.
  • Reduc.

📥 Download Datasheet

Datasheet preview – B2D20120HC1

Datasheet Details

Part number B2D20120HC1
Manufacturer BASiC Semiconductor
File Size 605.58 KB
Description SiC Schottky Diode
Datasheet download datasheet B2D20120HC1 Datasheet
Additional preview pages of the B2D20120HC1 datasheet.

📁 Similar Datasheet

Other Datasheets by BASiC Semiconductor

Full PDF Text Transcription

Click to expand full text
Product Summary VRRM 1200V IF (TC=150°C) 20 A** QC 110 nC** Features  Extremely low reverse current  No reverse recovery current  Temperature independent switching  Positive temperature coefficient on VF  Excellent surge current capability  Low capacitive charge Benefits  Essentially no switching losses  System efficiency improvement over Si diodes  Increased power density  Enabling higher switching frequency  Reduction of heat sink requirements  System cost savings due to smaller magnetics  Reduced EMI Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies  Motor drivers  Power factor correction Package Pin Definitions  Pin1- Anode  Pin2- Cahtode  Pin3- Anode Package Parameters Part Number Marking B2D20120HC1 B2D20120HC1 * Per Leg,
Published: |