Datasheet Details
| Part number | B2D20120H1 |
|---|---|
| Manufacturer | BASiC Semiconductor |
| File Size | 569.20 KB |
| Description | SiC Schottky Diode |
| Datasheet |
 B2D20120H1 Datasheet
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General Description
of Changes Release of the datasheet.
BASiC Semiconductor Ltd.
Shenzhen, China © 2022 BASiC Semiconductor Ltd.
Key Features
- Extremely low reverse current.
- No reverse recovery current.
- Temperature independent switching.
- Positive temperature coefficient on VF.
- Excellent surge current capability.
- Low capacitive charge Benefits.
- Essentially no switching losses.
- System efficiency improvement over Si diodes.
- Increased power density.
- Enabling higher switching frequency.
- Reduction of heat sink requirements.
- System cost savings due to smaller magnetics.
- Reduce.