B2D20120H1
B2D20120H1 is SiC Schottky Diode manufactured by BASiC Semiconductor.
Features
- Extremely low reverse current
- No reverse recovery current
- Temperature independent switching
- Positive temperature coefficient on VF
- Excellent surge current capability
- Low capacitive charge
Benefits
- Essentially no switching losses
- System efficiency improvement over Si diodes
- Increased power density
- Enabling higher switching frequency
- Reduction of heat sink requirements
- System cost savings due to smaller magnetics
- Reduced EMI
Applications
- Switch mode power supplies (SMPS)
- Uninterruptible power supplies
- Motor drivers
- Power factor correction
Package Pin Definitions
- Pin1 and backside
- Cathode
- Pin2- Anode
Package Parameters
Part Number
Marking
Si C Schottky Diode
Package: TO-247-2
1 2
Electrical Connection 1
2 backside
Package
TO-247-2
Preliminary datasheet Rev. 0.0
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Si C Schottky Diode
Maximum Ratings (TC=25℃ unless otherwise specified)
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