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BLM2004NE - N-Channel Enhancement Mode Power MOSFET

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BELLING

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BLM2004NE N-Channel Enhancement Mode Power MOSFET by BELLING - Datasheet Preview — Datasheet preview – BLM2004NE

Datasheet Details

Part number	BLM2004NE
Manufacturer	BELLING
File Size	291.27 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM2004NE Datasheet
Additional preview pages of the BLM2004NE datasheet.

Product details

Description

The BLM2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =6A Typ. RDS(ON) = 17mΩ @ VGS=4.5V Typ. RDS(ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Feb 25, 2016 |