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BLM2008E Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: BELLING

Overview: Pb Free Product BLM2008E N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number BLM2008E
Manufacturer BELLING
File Size 246.99 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet BLM2008E-BELLING.pdf

General Description

The BLM2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

Key Features

  • VDS = 20V,ID =6A Typ. RDS(ON) = 17m Ω @ VGS=4.5V Typ. RDS(ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

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BLM2008E Distributor