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BLM2008E - N-Channel Enhancement Mode Power MOSFET

General Description

The BLM2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =6A Typ. RDS(ON) = 17m Ω @ VGS=4.5V Typ. RDS(ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number BLM2008E
Manufacturer BELLING
File Size 246.99 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM2008E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Product BLM2008E N-Channel Enhancement Mode Power MOSFET Description The BLM2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A Typ.RDS(ON) = 17m Ω @ VGS=4.5V Typ.RDS(ON) = 22mΩ @ VGS=2.