Datasheet Summary
Pb Free Product
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
- VDS = 20V,ID =6A Typ.RDS(ON) = 17m Ω @ VGS=4.5V Typ.RDS(ON) = 22mΩ @ VGS=2.5V
ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Schematic diagram Marking and pin Assignment
Application
- PWM application
- Load switch
TSSOP-8 top view
Package Marking And Ordering Information
Device...