Part BLM2008E
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer BELLING
Size 246.99 KB
BELLING

BLM2008E Overview

Description

The BLM2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =6A (ON) = 17m Ω @ VGS=4.5V (ON) = 22mΩ @ VGS=2.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package