Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Pb Free Product
Description
The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
- VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM application
- Load switch
Schematic diagram Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device...