BLM2006NE Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: BELLING

Overview: N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE.

Datasheet Details

Part number	BLM2006NE
Manufacturer	BELLING
File Size	285.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM2006NE-BELLING.pdf

The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

Part Number	Description
BLM2004NE	N-Channel Enhancement Mode Power MOSFET
BLM2008E	N-Channel Enhancement Mode Power MOSFET
BLM2010E	N-Channel Enhancement Mode Power MOSFET
BLM22N10	100V N-Channel Power MOSFET
BLM2301	P-Channel Enhancement Mode Power MOSFET
BLM2302	N-Channel Enhancement Mode Power MOSFET
BLM2304	N-Channel Enhancement Mode Power MOSFET
BLM2305	P-Channel Enhancement Mode Power MOSFET
BLM2312	N-Channel Enhancement Mode Power MOSFET
BLM04N06	60V N-Channel Power MOSFET