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BLM2006NE - N-Channel Enhancement Mode Power MOSFET

Product Overview

BELLING

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BLM2006NE N-Channel Enhancement Mode Power MOSFET by BELLING - Datasheet Preview — Datasheet preview – BLM2006NE

Datasheet Details

Part number	BLM2006NE
Manufacturer	BELLING
File Size	285.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM2006NE Datasheet
Additional preview pages of the BLM2006NE datasheet.

Product details

Description

The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Feb 25, 2016 |