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BLM8811 - Dual N-Channel Power MOSFET

Datasheet Summary

Features

  • 2.5V drive.
  • Internal protection diode.
  • Common-drain type.

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Datasheet Details

Part number BLM8811
Manufacturer BELLING
File Size 391.33 KB
Description Dual N-Channel Power MOSFET
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BLM8811 12V, 21A, 5.5mΩ, Dual N-Channel Power MOSFET Features  2.5V drive  Internal protection diode  Common-drain type Applications  Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Source to Source Voltage Symbol VSSS Conditions Gate to Source Voltage VGSS Source Current (DC) Source Current (Pulse) IS ISP PW100s, duty cycle1% Total Dissipation Junction Temperature PT When mounted on ceramic substrate (5000mm20.8mm) Tj Storage Temperature Tstg Value 12 8 21 100 2.5 Unit V V A A W 150 - 55 to +150 C C Note: Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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