Continental Device India 2N2484
NPN SILICON PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO Collector -Base Voltage VCBO Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation @Ta=25 degC PD Derate Above 25 deg C Power Dissipation @Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient in Free Air Rth(j-a) * Lead Temperature TL 1/16" from Case for 10 SecondsELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION Collector -Emitter Voltage VCEO** IC=10mA,IB=0 Collector -Base Voltage VCBO IC=10uA.IE=0 Emitter -Base Voltage VEBO IE=10uA, IC=-