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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW66F, BCW66G BCW66H
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain
–IC = 100 mA; –VCE = 10 V –IC = 10 mA; VCE = 1 V
–IC = 100 mA; VCE = 1 V
–IC = 500 mA; VCE = 2 V
–VCBO –VCEO –VEBO –IC Ptot hFE
BCW66F 66G
max. 75 75
max. 45 45
max. 5
5
max.
BCW66F Datasheet
