BCW66G Description
current gain IC = 100 mA; VCE = 2 V VCBO VCEO VEBO IC Ptot hFE BCW66F 66G max. IB = 0 Collector emitter breakdown voltage V(BR)CEOmin.
BCW66G is Transistor manufactured by Continental Device India.
| Manufacturer | Part Number | Description |
|---|---|---|
| BCW66G | NPN General Purpose Amplifier | |
STMicroelectronics |
BCW66G | SMALL SIGNAL NPN TRANSISTORS |
Infineon |
BCW66G | NPN Silicon AF Transistor |
Nexperia |
BCW66G | 800mA NPN general-purpose transistor |
| BCW66G | SILICON NPN TRANSISTORS |
current gain IC = 100 mA; VCE = 2 V VCBO VCEO VEBO IC Ptot hFE BCW66F 66G max. IB = 0 Collector emitter breakdown voltage V(BR)CEOmin.