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BCW66G - Transistor

Download the BCW66G datasheet PDF. This datasheet also covers the BCW66F variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BCW66F-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BCW66G
Manufacturer CDIL
File Size 77.38 KB
Description Transistor
Datasheet download datasheet BCW66G Datasheet

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Other Datasheets by CDIL

Part Number Description
BCW66F Transistor
BCW66H Transistor
BCW60A SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60B SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60C SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 100 mA; –VCE = 10 V –IC = 10 mA; VCE = 1 V –IC = 100 mA; VCE = 1 V –IC = 500 mA; VCE = 2 V –VCBO –VCEO –VEBO –IC Ptot hFE BCW66F 66G max. 75 75 max. 45 45 max. 5 5 max.