CD9012 Datasheet PDF | Continental Device India

Continental Device India CD9012

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CD9012
Datasheet	CD9012 Download
Manufacturer	Continental Device India
Description	PNP Silicon Planar Transistor
Buy	Stock & Price

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 30 40 5.0 500 625 -55 to +150 UNIT V V V mA mW deg C

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL DataSheet4U.com TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 30 Collector -Emitter Voltage VCBO IC=100uA, IE=0 40 Collector -Base Voltage VEBO IE=100uA, IC=0 5.0 Emitter Base Voltage ICBO VCB=25V, IE=0 Collector Cut off Current IEBO VEB=3V, IC=0 Emitter Cut off Current hFE IC=50mA,VCE=1V * 64 DC Current Gain IC=500mA,VCE=1V 40 Collector Emitter Saturation Voltage VCE(Sat) IC=150mA,IB=15mA IC=500mA,IB=50mA VBE(Sat) IC=150mA,IB=15mA Base Emitter Saturation Voltage IC=500mA,IB=50mA Dynamic Characteristics Cob VCB=10V,f=1MHz Output Capacitance ft VCE=10V, IC=50mA, 200 Transition Frequency f=100MHz NF...