• Part: CD9012
  • Description: PNP Silicon Planar Transistor
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 220.12 KB
Download CD9012 Datasheet PDF
Continental Device India
CD9012
DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 30 40 5.0 500 625 -55 to +150 UNIT V V V m A m W deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL . TEST CONDITION MIN TYP VCEO IC=1m A, IB=0 30 Collector -Emitter Voltage VCBO IC=100u A, IE=0 40 Collector -Base Voltage VEBO IE=100u A, IC=0 5.0 Emitter Base Voltage ICBO VCB=25V, IE=0 Collector Cut off Current IEBO VEB=3V, IC=0 Emitter Cut off Current h FE IC=50m A,VCE=1V - 64 DC Current Gain IC=500m A,VCE=1V 40 Collector Emitter Saturation Voltage VCE(Sat) IC=150m A,IB=15m A IC=500m A,IB=50m A VBE(Sat) IC=150m A,IB=15m A Base Emitter Saturation Voltage IC=500m A,IB=50m A Dynamic Characteristics Cob VCB=10V,f=1MHz Output Capacitance ft VCE=10V, IC=50m A, 200 Transition Frequency f=100MHz NF VCE=10V, IC=1m A Noise Figure f=1KHz h FE...