CD9018 Datasheet PDF | Continental Device India

Continental Device India CD9018

The TO-92 Package, Tape and Ammo Pack Drawings are correct as on the date of issue/revision of this Data Sheet. The currently valid dimensions and information, may please be confirmed from the TO-92 Drawing in the Packages and Packing Section of the Product Catalogue.

Part No.	CD9018
Datasheet	CD9018 Download
Manufacturer	Continental Device India
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj Tstg VALUE 15 30 5 30 400 125 - 55 to +125 UNITS V V V mA mW ºC ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION V IC=3mA, IB=0 Collector Emitter Voltage CEO VCBO IC=10µA, IE=0 Collector Base Voltage VEBO IE=10µA, IC=0 Emitter Base Voltage Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage DYNAMIC CHARACTERISTICS

DESCRIPTION

Output Capacitance Transition Frequency Noise Figure hFE Rank Classfication Rank D hFE 29 - 44 CD9018Rev_3 170403E MIN 15 30 5 TYP MAX UNITS V V V ICBO IEBO hFE VCE (sat) VCB=15V, IE = 0 VEB=3V, IC = 0 VCE=5V, IC=1mA IC=10mA, IB=1mA 29 50 100 273 0.5 nA nA V SYMBOL Cob fT NF TEST CONDITION VCB=10V, IE=0,f=1MHz VCE=10V, IC=5mA, f=100MHz...