• Part: CD9018
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 157.75 KB
Download CD9018 Datasheet PDF
Continental Device India
CD9018
DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj Tstg VALUE 15 30 5 30 400 125 - 55 to +125 UNITS V V V m A m W ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION V IC=3m A, IB=0 Collector Emitter Voltage CEO VCBO IC=10µA, IE=0 Collector Base Voltage VEBO IE=10µA, IC=0 Emitter Base Voltage Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Output Capacitance Transition Frequency Noise Figure h FE Rank Classfication Rank D h FE 29 - 44 CD9018Rev_3 170403E MIN 15 30 5 UNITS V V V ICBO IEBO h FE VCE (sat) VCB=15V, IE = 0 VEB=3V, IC = 0 VCE=5V, IC=1m A IC=10m A, IB=1m A 29 50 100 273 0.5 n A n A V SYMBOL Cob f T NF TEST CONDITION VCB=10V, IE=0,f=1MHz VCE=10V, IC=5m A, f=100MHz VCE=10V,...