• Part: CD9014
  • Description: NPN SILICON PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 88.17 KB
Download CD9014 Datasheet PDF
Continental Device India
CD9014
DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 50 50 5.0 100 625 -55 to +150 UNIT V V V m A m W deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1m A, IB=0 50 Collector -Emitter Voltage VCBO IC=100u A, IE=0 50 Collector -Base Voltage VEBO IE=100u A, IC=0 5.0 Emitter Base Voltage ICBO VCB=50V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current h FE IC=1m A,VCE=5V 60 DC Current Gain Collector Emitter Saturation Voltage VCE(Sat) IC=100m A,IB=5m A VBE(Sat) IC=100m A,IB=5m A Emitter Base Saturation Voltage Dynamic Characteristics Cob VCB=10V,f=1MHz Output Capacitance ft VCE=5V,IC=10m A, 125 Transition Frequency f=100MHz NF VCE=5V, IC=200u A Noise Figure f=1KHz h FE CLASSIFICATION A : 60-150, B : 100-300, C : 200-600, D : 400-1000,...