CD9014 Datasheet PDF | Continental Device India

Continental Device India CD9014

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CD9014
Datasheet	CD9014 Download
Manufacturer	Continental Device India
Description	NPN SILICON PLANAR TRANSISTOR
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 50 50 5.0 100 625 -55 to +150 UNIT V V V mA mW deg C

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 50 Collector -Emitter Voltage VCBO IC=100uA, IE=0 50 Collector -Base Voltage VEBO IE=100uA, IC=0 5.0 Emitter Base Voltage ICBO VCB=50V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current hFE IC=1mA,VCE=5V 60 DC Current Gain Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA VBE(Sat) IC=100mA,IB=5mA Emitter Base Saturation Voltage Dynamic Characteristics Cob VCB=10V,f=1MHz Output Capacitance ft VCE=5V,IC=10mA, 125 Transition Frequency f=100MHz NF VCE=5V, IC=200uA Noise Figure f=1KHz hFE CLASSIFICATION A : 60-150, B : 100-300, C : 200-...