CD9014 - NPN SILICON PLANAR TRANSISTOR

CDIL

General Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 50 50 5.0 100 625 -55 to +150 UNIT V V V mA mW deg C ELECTRICAL CHARACTERISTICS (Ta=25

📥 Download Datasheet

CD9014 npn silicon planar transistor by CDIL - Datasheet Preview

Datasheet Details

Part number	CD9014
Manufacturer	CDIL
File Size	88.17 KB
Description	NPN SILICON PLANAR TRANSISTOR
Datasheet	CD9014 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CD90-B2GA331KYNS	Ceramic Capacitors	TDK
CD90-B2GA391KYNS	Ceramic Capacitors	TDK
CD9088CB	1-Chip FM Electrical Tuner	ETC
CD9088CB	Monolithic Power FM radio tuner	FORWARD
CD90ZU2GA222MYGKA	Disc Type Capacitors	TDK

Other Datasheets by CDIL

Part Number	Description
CD9012	PNP Silicon Planar Transistor
CD9013	NPN SILICON PLANAR TRANSISTOR
CD9015	PNP SILICON PLANAR TRANSISTOR
CD9018	NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CD909	NPN PLASTIC POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 50 50 5.0 100 625 -55 to +150 UNIT V V V mA mW deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 50 Collector -Emitter Voltage VCBO IC=100uA, IE=0 50 Collector -Base Voltage VEBO IE=100uA, IC=0 5.