CSC2688 - NPN SILICON EPITAXIAL POWER TRANSISTOR

CDIL

General Description

SYMBOL VALUE VCBO 300 Collector -Base Voltage VCEO 300 Collector -Emitter Voltage VEBO 5 Emitter Base Voltage IC 200 Collector Current Continuous PC 1.25 Collector Power Dissipation @ Ta=25 deg C PC 10 Collector Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Tem

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CSC2688 npn silicon epitaxial power transistor by CDIL - Datasheet Preview

Datasheet Details

Part number	CSC2688
Manufacturer	CDIL
File Size	94.43 KB
Description	NPN SILICON EPITAXIAL POWER TRANSISTOR
Datasheet	CSC2688 Datasheet

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Full PDF Text Transcription (Reference)

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSC2688 TO-126 EC B ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 300 Collector -Base Voltage VCEO 300 Collector -Emitter Voltage VEBO 5 Emitter Base Voltage IC 200 Collector Current Continuous PC 1.25 Collector Power Dissipation @ Ta=25 deg C PC 10 Collector Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION www.DataSheet4U.com VCEO IC=5mA, IB=0 Collector Emitter Voltage VCBO IC=0.1mA, IE=0 Collector Base Voltage VEBO IE=0.