CSC2688 Datasheet PDF | Continental Device India

Continental Device India CSC2688

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSC2688
Datasheet	CSC2688 Download
Manufacturer	Continental Device India
Description	NPN SILICON EPITAXIAL POWER TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C)

DESCRIPTION

SYMBOL VALUE VCBO 300 Collector -Base Voltage VCEO 300 Collector -Emitter Voltage VEBO 5 Emitter Base Voltage IC 200 Collector Current Continuous PC 1.25 Collector Power Dissipation @ Ta=25 deg C PC 10 Collector Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION VCEO IC=5mA, IB=0 Collector Emitter Voltage VCBO IC=0.1mA, IE=0 Collector Base Voltage VEBO IE=0.1mA,IC=0 Emitter Base Voltage ICBO VCB=200V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat)* IC=50mA,IB=5mA Collector Emitter Saturation Voltage hFE* IC=10mA, VCE=10V DC Current Gain Dynamic Characteristics ft VCE=30V,IC=10mA, Transition Frequency Cre VCB=30V, IE=0 Feed Back Capacitance f=1MHz *hFE Classification R: 40-80 O : 60-120 Y :100-200 *PULSE TEST:PW=350uS, Duty Cycle=2% UNIT V V V mA W W deg C deg C M...