Datasheet Details
| Part number | CSC2688 |
|---|---|
| Manufacturer | CDIL |
| File Size | 94.43 KB |
| Description | NPN SILICON EPITAXIAL POWER TRANSISTOR |
| Datasheet | CSC2688_CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany NPN SILICON EPITAXIAL POWER TRANSISTOR CSC2688 TO-126 EC B ABSOLUTE MAXIMUM RATINGS(Ta=25deg.
| Part number | CSC2688 |
|---|---|
| Manufacturer | CDIL |
| File Size | 94.43 KB |
| Description | NPN SILICON EPITAXIAL POWER TRANSISTOR |
| Datasheet | CSC2688_CDIL.pdf |
|
|
|
SYMBOL VALUE VCBO 300 Collector -Base Voltage VCEO 300 Collector -Emitter Voltage VEBO 5 Emitter Base Voltage IC 200 Collector Current Continuous PC 1.25 Collector Power Dissipation @ Ta=25 deg C PC 10 Collector Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION ..
VCEO IC=5mA, IB=0 Collector Emitter Voltage VCBO IC=0.1mA, IE=0 Collector Base Voltage VEBO IE=0.1mA,IC=0 Emitter Base Voltage ICBO VCB=200V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat)* IC=50mA,IB=5mA Collector Emitter Saturation Voltage hFE* IC=10mA, VCE=10V DC Current Gain Dynamic Characteristics ft VCE=30V,IC=10mA, Transition Frequency Cre VCB=30V, IE=0 Feed Back Capacitance f=1MHz *hFE Classification R: 40-80 O : 60-120 Y :100-200 *PULSE TEST:PW=350uS, Duty Cycle=2% UNIT V V V mA W W deg C deg C MIN 300 300 5 40 50 G :160-250 MAX 0.1 0.1 1.5 250 3 UNIT V V V uA uA V MHz pF Continental Device India Limited Data Sheet Page 1 of 2 TO-126 (SOT-32) Plastic Package C N P B 1 2 3 A D IM A B C D E F G L M N P S M IN .
M AX .
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