CSD1833 Datasheet PDF | Continental Device India

Continental Device India CSD1833

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSD1833
Datasheet	CSD1833 Download
Manufacturer	Continental Device India
Description	NPN SILICON EPITAXIAL POWER TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C)

DESCRIPTION

Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current (DC) Pulse* Collector Power Dissipation Ta 25degC Tc=25 deg C Junction Temperature Storage Temperature Range *Single Pulse Pw=100ms SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 100 80 5 7 10 2 30 150 -55 to +150 UNIT V V V A A W W deg C deg C

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=100V, IE=0 Collector Cut off Current ICEO VCE=80, IB=0 IEBO VBE=4V,IC=0 Emitter Cut off Current VCE(Sat)** IC=4A,IB=0,4A Collector Emitter Saturation Voltage VBE(Sat)** IC=4A,IB=0,4A Base Emitter Saturation Voltage hFE** IC=1A, VCE=5V DC Current Gain Dynamic Characteristics Transition Frequency ft Collector Output Capacitance Cob hFE CLASSIFICATION** MARKING **Pulse Test VCB=10V, IE...