CSD1833
CSD1833 is NPN SILICON EPITAXIAL POWER TRANSISTOR manufactured by Continental Device India.
DESCRIPTION
Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current (DC) Pulse- Collector Power Dissipation Ta 25deg C Tc=25 deg C Junction Temperature Storage Temperature Range
- Single Pulse Pw=100ms SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 100 80 5 7 10 2 30 150 -55 to +150 UNIT V V V A A W W deg C deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION
SYMBOL TEST CONDITION VCEO IC=1m A, IB=0 Collector Emitter Voltage VCBO IC=50u A, IE=0 Collector Base Voltage VEBO IE=50u A,IC=0 Emitter Base Voltage ICBO VCB=100V, IE=0 Collector Cut off Current ICEO VCE=80, IB=0 IEBO VBE=4V,IC=0 Emitter Cut off Current VCE(Sat)-
- IC=4A,IB=0,4A Collector Emitter Saturation Voltage VBE(Sat)-
- IC=4A,IB=0,4A Base Emitter Saturation Voltage h FE-
- IC=1A, VCE=5V DC Current Gain Dynamic Characteristics Transition Frequency ft Collector Output Capacitance Cob h FE CLASSIFICATION-
- MARKING
- - Pulse Test VCB=10V, IE=0 f=1MHz D : 60-120; E : 100-200, CSD 1833E VCE=5V,IC=50m A, f=5MHz
MIN 80 100 5 60
- MAX 10 1 10 1 1.5 320
UNIT V V V u A u A u A V V
- 5
- MHz
- 150
- p F
F: 160-320 CSD 1833F
CSD 1833D
Continental Device India Limited
Data Sheet
Page 1 of 3
Free Datasheet http://..
TO-220 Plastic Package
D IM A B C D E F G H J K L M N O M IN . M AX .
1 2
All diminsions in mm.
14.42 16.51 9.63 10.67 3.56 4.83
- 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43
- 0.56 12.70 14.73 2.80 4.07 2.03 2.92
- 31.24 D EG 7
4 PIN CONFIGURATION 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR
1 2 3
End Pin ± 1.5 Label 536.00 13.74
TO-220 Tube...
