• Part: CSD545
  • Description: NPN SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 212.71 KB
Download CSD545 Datasheet PDF
Continental Device India
CSD545
CSD545 is NPN SILICON EPITAXIAL TRANSISTOR manufactured by Continental Device India.
DESCRIPTION SYMBOL BVCEO Collector Emitter Voltage BVCBO Collector Base Voltage BVEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak PD Colector Power Dissipation , T Operating And Storage Junction j Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN BVCEO IC=1m A,IB=0 Collector Emitter Breakdown Voltage 25 Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain BVCBO BVEBO ICBO IEBO h FE (1) h FE (2) - IC=10µA,IB=0 IE=10µA, IC=0 VCB=20V, IE = 0 VBE=4V, IE = 0 VCE=2V,IC=50m A VCE=2V,IC=1A 25 5 1.0 1.0 560 VALUE 25 25 5 1 1.5 600 -55 to +150 UNIT V V V A A m W ºC UNIT V V V µA µA 60 30 0.85 0.1 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage VBE(sat)- IC=500m A,IB=50m A VCE(sat)- IC=500m A,IB=50m A 1.2 0.3 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN DYNAMIC CHARACTERISTICS Transition Frequency Collector Output Capacitance f T Cob IC=50m A, VCE=10V IE=0, VCB=10V f=1MHz UNIT 180 15 MHz p F CLASSIFICATION D h FE (1) 60-120 - Pulse Condition: Width < 300µs, Duty Cycle < 2%. Continental Device India Limited E 100-200 F 160-320 G 280-560 Data Sheet Page 1 of 3 .. CSD545 TO-92 Plastic Package TO-92 Plastic Package TO-92 Transistors on Tape and Ammo Pack Dimension With 'L' Uncontrolled Ammo Pack Style MECHANICAL DATA T P h A A1 (p) Adhesive Tape on Top Side D FEE Carrier Strip h LABEL FLAT...