NE696M01 Datasheet | CEL

.. NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR Features - - - - - HIGH f T: 14 GHz TYP at 3 V, 10 m A LOW NOISE FIGURE: NF = 1.6 d B TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 d B TYP at 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 0.65 2.0 ± 0.2 1.3 6 0.2 (All Leads) 5 T95 SIDE VIEW DESCRIPTION NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 d B more gain pared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 PIN OUT 1. Emitter 2. Emitter 3. Base 4. Emitter 5. Emitter 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO h FE1 f T Cre2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 3 V, IC = 10 m A Gain Bandwidth at VCE = 3 V, IC = 10 m A, f = 2 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 10 m A, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 m A, f = 2 GHz GHz p F d B d B UNITS µA µA 80 120 14 0.15 14 1.6 MIN NE696M01 M01 TYP MAX 0.1 0.1 160 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel. California Eastern...