NESG2021M16 Description
NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NESG2021M16 Key Features
- HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (