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PRELIMINARY DATA SHEET
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NESG2021M16
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE
NESG2021M16 M16
DC RF
SYMBOLS NF
Ga
NF
Ga
MSG |S21E|2 P1dB
OIP3 fT Cre
ICBO IEBO hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.
NESG2021M16 Datasheet
