Datasheet Details
| Part number | NESG2021M16 |
|---|---|
| Manufacturer | CEL |
| File Size | 79.55 KB |
| Description | HIGH FREQUENCY TRANSISTOR |
| Datasheet | NESG2021M16-CEL.pdf |
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Overview: PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR.
| Part number | NESG2021M16 |
|---|---|
| Manufacturer | CEL |
| File Size | 79.55 KB |
| Description | HIGH FREQUENCY TRANSISTOR |
| Datasheet | NESG2021M16-CEL.pdf |
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NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NESG2021M16 M16 DC RF SYMBOLS NF Ga NF Ga MSG |S21E|2 P1dB OIP3 fT Cre ICBO IEBO hFE PARAMETERS AND CONDITIONS UNITS Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT dB Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT dB Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT dB
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