NESG204619 - NPN SiGe TRANSISTOR

CEL

Key Features

IDEAL FOR LOW NOISE, HIGH-GAIN.

NESG204619 npn sige transistor by CEL - Datasheet Preview

Datasheet Details

Part number	NESG204619
Manufacturer	CEL
File Size	144.02 KB
Description	NPN SiGe TRANSISTOR
Datasheet	NESG204619 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE ORDERING INFORMATION PART NUMBER NESG204619-A NESG204619-T1-A QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales ofﬁce. The unit sample quantity is 50 pcs.