NESG2031M16 Datasheet | CEL

.. NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR Features - - HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 - - DESCRIPTION NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes:...