NESG2031M16 Description
NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: Collector to base capacitance when the emitter pin is grounded.
NESG2031M16 Key Features
- HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (