Datasheet Details
| Part number | NESG2101M16 |
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| Manufacturer | CEL |
| File Size | 253.61 KB |
| Description | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Datasheet | NESG2101M16_CEL.pdf |
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Overview: .. PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY.
| Part number | NESG2101M16 |
|---|---|
| Manufacturer | CEL |
| File Size | 253.61 KB |
| Description | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Datasheet | NESG2101M16_CEL.pdf |
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NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0.4 0.5 100 100 260 1.2 MAX PARAMETERS AND CONDITIONS Output Power at 1 dB pression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain3 at VCE = 2 V, IC = 15 mA RF 1.
MSG = S21 S12 2.
Collector to base capacitance when the emitter pin is grounded.
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