NESG2101M16 Description
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: Collector to base capacitance when the emitter pin is grounded. Pulsed measurement, pulse width...
NESG2101M16 Key Features
- HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (