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NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR

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Part number NESG2101M16
Manufacturer CEL
File Size 253.61 KB
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
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NESG2101M16 Product details

Description

NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF

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