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NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR

General Description

NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF

Key Features

  • HIGH.

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Datasheet Details

Part number NESG2101M16
Manufacturer CEL
File Size 253.61 KB
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NESG2101M16 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.