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NESG270034 - NPN SiGe RF TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz.
  • Using UHS2-HV process (SiGe technology), VCBO (.

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Datasheet Details

Part number NESG270034
Manufacturer CEL
File Size 265.63 KB
Description NPN SiGe RF TRANSISTOR
Datasheet download datasheet NESG270034 Datasheet

Full PDF Text Transcription for NESG270034 (Reference)

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www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATUR...

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OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz Pout = 31.5 dBm TYP.

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