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NESG3031M14 - NPN SiGe HIGH FREQUENCY TRANSISTOR

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Features

  • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN.

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Datasheet preview – NESG3031M14

Datasheet Details

Part number NESG3031M14
Manufacturer CEL
File Size 572.79 KB
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NESG3031M14 Datasheet
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www.DataSheet4U.com DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz • M14 PACKAGE: 4-pin lead-less minimold package M14 Package ORDERING INFORMATION PART NUMBER NESG3031M14-A NESG3031M14-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office.
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