NESG3031M14
NESG3031M14 is NPN SiGe HIGH FREQUENCY TRANSISTOR manufactured by CEL.
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NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR
Features
- THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
- MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
- SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz
- M14 PACKAGE: 4-pin lead-less minimold package M14 Package
ORDERING INFORMATION
PART NUMBER NESG3031M14-A NESG3031M14-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM
- 8 mm wide embossed taping
- Pin 1 (Collector), Pin 4 (Emitter) face...
