Click to expand full text
CEP02N9/CEB02N9
CEF02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP02N9 CEB02N9 CEF02N9
VDSS 900V 900V
900V
RDS(ON) 6.8Ω 6.8Ω
6.8Ω
ID 2.6A 2.6A 2.6A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage
VDS 900
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
ID IDM e PD
2.6 1.9 10.4 125 0.83
2.6 d 1.9 d 10.4 d 47 0.
CEB02N9 Datasheet
