Datasheet4U Logo Datasheet4U.com

CEB60N10V - N-Channel MOSFET

Key Features

  • 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📥 Download Datasheet

Datasheet Details

Part number CEB60N10V
Manufacturer CET
File Size 414.02 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB60N10V Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEB6020P Single P-Channel Enhancement Mode MOSFET Chino-Excel Technology
CEB603 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEB603 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEB6030AL N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology

Other Datasheets by CET

Part Number Description
CEB60N10 N-Channel MOSFET
CEB60N06G N-Channel MOSFET
CEB6056 N-Channel MOSFET
CEB6060N N-Channel Enhancement Mode Field Effect Transistor
CEB6086 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP60N10V/CEB60N10V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±30 57 228 200 1.