• Part: CEB6106
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 190.50 KB
Download CEB6106 Datasheet PDF
CET
CEB6106
CEB6106 is N-Channel MOSFET manufactured by CET.
FEATURES 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM ±20 56 170 131 0.88 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 117 51 -55 to 175 Units V V A A W W/ C m J A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.14 62.5 Units C/W C/W Details are subject to change without notice . Rev 2. 2006.Sep http://.cetsemi. CEP6106/CEB6106 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF...