CEB840B
CEB840B is N-Channel MOSFET manufactured by CET.
FEATURES
440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
±30
9 36 125 0.83
Operating and Store Temperature Range
TJ,Tstg
-55 to 155
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.0 62.5
Units V V A A W
W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
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