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CEB840L - N-Channel MOSFET

Key Features

  • Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEB840L
Manufacturer CET
File Size 375.87 KB
Description N-Channel MOSFET
Datasheet download datasheet CEB840L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 500 VGS ±20 ID 8 8 e IDM f 32 32 e 125 40 PD 1.0 0.